2025 IITC Conference Program

MONDAY, JUNE 2, 2025

10:30~10:40
Welcome & Introduction
Chairs: Dr. Yasuhiro Kawase(Mitsubishi Chemical Corp.), Prof. Sehun Kwon(Pusan National University)

10:40~11:25
Dr. Jiho Kang, SK hynix
“Semiconductor technology trends to overcome the integration limitations for future AI memory devices”

11:25~12:10
Prof. Tetsu Tanaka, Tohoku University
“Advanced 3DIC/TSV technologies for neuron-machine interface devices”

12:10~13:40
Lunch

13:40~14:25
Dr. Kimin Jun, Samsung Electronics Co., Ltd.
“BSPDN: an interconnect breakthrough powered by bonding technology”

14:25~15:10
Prof. Jyehong Chen, National Yang Ming Chiao Tung University
“The future system prospects of electrical and optical interconnects and their role in AI data centers”

15:10~15:40
Coffee Break

15:40~16:25
Prof. Yung-Jr Hung, National Sun Yat-sen University
“Platform and devices for co-packaged optics”

16:25~17:10
CTO. Shu-Jen Han, Quantum Device
“Building a quantum computer – from device to system”

TUESDAY, JUNE 3, 2025

08:20~08:40
[Session 01 – Conference Kick off and Awards Ceremony]
Chairs: Prof. Kuan-Neng Chen(National Yang Ming Chiao Tung University), Prof. Soo-Hyun Kim(UNIST)

08:40~09:30
[Keynote Talk I] Dr. Jong Myeong Lee, Samsung Electronics Co., Ltd.
“Innovative interconnect technology of future semiconductor”
Chairs: Prof. Kuan-Neng Chen(National Yang Ming Chiao Tung University), Prof. Soo-Hyun Kim(UNIST)

09:30~09:50
Coffee Break

09:50~12:00
[Session 02 – Advanced Interconnects I]
Chairs: Dr. Munehiro Tada(Keio University), Dr. Zsolt Tokei(IMEC)

09:50~10:15
(S02-01)
Invited Dr. Daniel C. Edelstein, IBM
“Innovations enabling the continued extendibility of Cu and Post-Cu damascene BEOL technology”

10:15~10:40
(S02-02)
Invited Dr. Giulio Marti, IMEC
“Advancing pillar-based FSAV integration of Ru interconnect to enlarge the process window and enable multi-layers of high-aspect ratio”

10:40~11:00
(S02-03)
Dr. Giulio Marti, IMEC
“Via resistance optimization at advanced sub-2nm nodes”
Assawer Soussou, Giulio Marti, Zsolt Tokei, Seongho Park, Benjamin Vincent – Lam Research Corporation, IMEC

11:00~11:20
(S02-04)
Mr. Takumi Nishinobo, Tokyo Electron Limited
“Post-Cu CMP leakage suppression using sequential small molecular inhibitor treatment”
Takumi Nishinobo, Kai-Hung Yu, Ryota Yonezawa, Suzuki Hidenao, Aizawa Hirokazu – Tokyo Electron Ltd.

11:20~11:40
(S02-05)
Dr. Kwang Seok Lee, Samsung Electronics Co., Ltd.
“Process integration of high-density low-k dielectric material for enhanced plasma-induced damage resistant performance”
Kwang Seok Lee, Sanghyun Lee, Kyoungpil Park, Gyuho Myeong, Taehwan Jeong, Chin Kim, Doohwan Park, Sihyeong Kim, Taejung Kim, Jeonghoon Ahn, Jongmin Baek, Kang Sub Yim, Kichul Park, Hee Sung Kang – Samsung Electronics Co., Ltd.

11:40~12:00
(S02-06)
Dr. Cassie Sheng, IMEC
“Addressing integration challenges in direct backside contact of CFET”
C. Sheng, S. Demuynck, K. Stiers, A. Peng, C. Toledo de Carvalho Cavalcante, T. Chiarella, A.Vandooren, M. Hosseini, D. Batuk, P. Puttarame Gowda, F. Sebaai, K. Vandersmissen, R. Chukka, L. Di Donato, W.Sun, M. Hasan, A. Weldeslassie, D. Cerbu, N. Jourdan, A. Mingardi, R. Kumar Saroj, S. Kumar Sarkar, S. Iacovo, D. Montero, T. Sarkar, T-H. Shen, J. Bogdanowicz, G. Murdoch., J. Mitard, N. Reddy, I. Gyo Koo, E. Altamirano Sanchez, A-L. Charley, L.P.B. Lima, N. Horiguchi, S. Biesemans – IMEC, Hitachi High-Tech Corporation

12:00~13:10
Lunch

13:10~15:05
[Session 03 – 3D Packaging & Hybrid Bonding I]
Chairs: Prof. Kuan-Neng Chen(National Yang Ming Chiao Tung University), Mr. Tobias Wernicke(EV Group)

13:10~13:35
(S03-01)
Invited Dr. Juheon Yang, SK hynix
“Metal interconnection of high bandwidth memory in wafer level packaging”

13:35~13:55
(S03-02)
Dr. Kisik Choi, IBM
“Predictive simulations and experimental study of AlN bonding for better thermal dissipation in BSPDN”
Sarabjot Singh, Sangshin Jang, Prabudhya R. Chowdhury, Ruilong Xie, Son Nguyen, Yasir Sulehria, Richard Johnson, Michael Belyansky, Juntao Li, Dureseti Chidambarrao, Kang-ill Seo, Kisik Choi – IBM, Samsung Electronics Co., Ltd.

13:55~14:15
(S03-03)
Mr. Abhaysinha Patil, IMEC
“Evaluation of warpage tolerance of 100 µm dies to achieve void-free bond and 100% assembly yield”
Abhaysinha Patil, Koen Kennes, Dieter Cuypers, Bianca Chou, Violeta Georgieva, Samuel Suhard, Arnita Podpod, Alain Phommahaxay, Andy Miller, Yoojin Ban, Filippo Ferraro, Joris Van Campenhout – IMEC

14:15~14:30
(S03-04)*
Mr. Chun-Che Cheng, National Yang Ming Chiao Tung University
“Thermal performance analysis of BSPDN and FSPDN from chip to package level”
Chun-Che Cheng, Mu-Ping Hsu, Chiao-Yen Wang, Li-Hsin Cheng, Kuan-Neng Chen – National Yang Ming Chiao Tung University

14:30~14:45
(S03-05)*
Mr. Hayato Kitagawa, Yokohama National University
“Novel bonding interfacial material for carrier wafer of BSPDN & reconstructed D2W”
Hayato Kitagawa, Taisuke Yamamoto, Jenyu Lee, Shuntaro Machida, Kazuhiro Yuasa, Fumihiro Inoue – Yokohama National University, Kokusai Electric Corporation

14:45~15:05
(S03-06)
Dr. Imene Jadli, IMEC
“Optimizing direct die-to-wafer hybrid bonding: the role of scanner precorrection in achieving fine overlay performance”
Alex Hsu, Imene Jadli, Samuel Suhard, Anne Jourdain, Andy Miller, Amir-Hossein Tamaddon, Koen Kennes, Etienne De Poortere, Victor Blanco – ASML, IMEC

15:05~15:25
Coffee Break

15:25~17:35
[Session 04 – Materials and Unit Process I]
Chairs: Dr. Kang Sub Yim(Samsung Electronics Co., Ltd.), Dr. Marco Arnold(BASF Electronic Materials)

15:25~15:50
(S04-01)
Invited Dr. Jongmin Baek, Samsung Electronics Co., Ltd.
“Selective deposition in interconnect: enabling high-performance and scalable integration”

15:50~16:10
(S04-02)
Dr. Rutvik Mehta, Veeco Instruments Inc.
“Ion beam deposition of ruthenium for interconnect applications in a direct metal etch approach”
Rutvik J Mehta, Gayle Murdoch, Gilles Delie, Jean-Philippe Soulie, A. Sepulveda Marquez, Seongho Park, Zsolt Tokei, Yuejing Wang, Ashish Kulkarni, Robert Walko, Frank Cerio, Robert Caldwell – Veeco Instruments Inc., IMEC

16:10~16:30
(S04-03)
Dr. Fulya Ulu Okudur, IMEC
“UV surface pre-treatment and wet cleaning of Ruthenium MP18 semi-damascene structures”
Fulya Ulu Okudur, Dennis van Dorp, Quoc Toan Le, Tomoya Tanaka, Teppei Nakano, Gilles Delie, Christopher Gort, Hongrui Kang, Benjamin Groven, Thierry Conard, Souvik Kundu, Stefan Decoster, Rita Tilmann, Alexis Franquet, Jan Philipp Hofmann, Gayle Murdoch, Ehsan Shafahian, Naveen Reddy, Efrain Altamirano Sanchez, Chen Wu, Seongho Park, Zsolt Tőkei – IMEC, Screen SPE Germany GmbH, SCREEN Semiconductor Solutions Co., Ltd., Technical University of Darmstadt

16:30~16:45
(S04-04)*
Mr. Yeongjun Lim, KAIST
“Optimizing grain boundary doping in molybdenum interconnects: a first-principle study”
Yeongjun Lim, Mincheol Shin – KAIST

16:45~17:00
(S04-05)*
Ms. Min-Ji Ha, Hanyang University
“Effect of H2/N2 ratio on molybdenum nitride thin films deposited by plasma-enhanced atomic layer deposition”
Min-Ji Ha, Na-Gyeong Kang, Eun-Su Chung, Ji-Hoon Ahn – Hanyang University

17:00~17:15
(S04-06)*
Ms. Chaehyun Park, UNIST
“Atomic layer deposited highly conductive niobium carbide thin films
as next-generation diffusion barriers for Cu and Ru interconnects”

Chaehyun Park, Minjeong Kweon, Debananda Mohapatra, Taehoon Cheon, Jong-Seong Bae, Daeyoon Jeong, Young-Bae Park, Soo-Hyun Kim – UNIST, DGIST, Korea Basic Science Institute, Andong National University

17:15~17:35
(S04-07)
Dr. Geun-Tae Yun, Samsung Electronics Co., Ltd.
“Development of a robust ultra-low-k film and carbon replenishment for reliable BEOL interconnect”
Geun-Tae Yuna, Soohyun Barka, Joohan Kima, Jayeong Heoa, Junsung Kima, Hoon Seok Seoa, Jong Min Baeka, Kang Sub Yima, Sunjung Kima – Samsung Electronics Co., Ltd

WEDNESDAY, JUNE 4, 2025

08:30~09:20
[Session 05 – Keynote Talk Ⅱ] VP. Markus Wimplinger, EV Group
“The role of wafer bonding in next generation interconnect scaling”
Chair: Mr. Tatsuya Usami(Rapidus Corporation)

09:20~10:45
[Session 06 – Advanced Interconnects II]
Chair: Dr. Kisik Choi(IBM)

09:20~09:45
(S06-01)
Invited Dr. Kyoung-Woo Lee, Samsung Electronics Co., Ltd.
“Integration of advanced backside power delivery network for 2nm node technology”

09:45~10:05
(S06-02)
Dr. Gilles Delie, IMEC
“MP16/18 integration in Ru semi-damascene using SiN-based core for spacer-is-dielectric SADP”
Gilles Delie, Stefan Decoster, Chen Wu, Vincent Renaud, Giulio Marti, Souvik Kundu, Yannick Hermans, Fulya Ulu Okudur, Bart Kenens, Nancy Heylen, Gayle Murdoch, Seongho Park, Zsolt Tőkei – IMEC

10:05~10:25
(S06-03)
Dr. Koichi Motoyama, IBM
“First demonstration of 16nm pitch subtractive Ru interconnects for advanced technology nodes”
C. Penny, K. Motoyama, H. Huang, S. Hosadurga, G. Kim, J. Kim, J. Oh, N. Lanzillo, J. Lee, D. Jayachandran, H. Zhang, S. Katakam, H. Singh, G. Oyibo, W-T. Tseng, B. Antonovich, N. Latham, W. Li, C. Yang, S. Munnangi, U. Lamichhane, S. Fan, T. Yamashita, K. Choi, K-I. Seo, D. Guo – IBM, Samsung Electronics Co., Ltd.

10:25~10:45
(S06-04)
Dr. Stéphane Larivière, IMEC
“Electrical test demonstration for 0.55 NA EUV single patterning damascene process”
S. Larivière, V.M. Blanco Carballo, K. Vandersmissen, B. De Wachter, M. Sangghaleh, K. Nafus, Y. Feurprier, Y. Wako, N. Fukui, E. P. De Poortere, C-H. Yao, A. Hsu, C. Tabery, J. Doise, P. De Schepper, N. Guzman – IMEC, Tokyo Electron Ltd., ASML, JSR Corporation, Intel Corporation

10:45~11:05
Coffee Break

11:05~12:30
[Session 07 – Reliability and Characterization]
Chair: Dr. Benjamin Lilienthal-Uhlig(Fraunhofer IPMS/CNT)

11:05~11:30
(S07-01)
Invited Dr. Bettina Wehring, Fraunhofer IPMS
“Advanced XPS depth profiling analysis of metal alloys as diffusion barriers for Cu interconnects”

11:30~11:50
(S07-02)
Ms. Youqi Ding, IMEC
“Quantifying the impact of thermal gradients on electromigration lifetimes in 90 nm CD Cu Lines”
Y. Ding, O. Varela Pedreira, M. Lofrano, H. Zahedmanesh, J. Diaz Fortuny, X. Chang, T. Chavez, H. Farr, I. De Wolf, K. Croes – KU Leuven, IMEC, QualiTau Inc

11:50~12:10
(S07-03)
Mr. Ahmed Saleh, IMEC
“AI-driven variability-aware physics-based EM simulation framework for Jmax estimation”
A. S. Saleh, K. Croes, H. Ceric, I. De Wolf, H. Zahedmanesh – IMEC, Vienna University of Technology

12:10~12:30
(S07-04)
Dr. Jit Dutta, University of California San Diego
“Nanoscale assesment of capping layers to prevent surface oxidation of W interconnect plugs”

Jit Dutta, Ping-Che Lee, Dipayan Pal, Wei Zhang, Nathan Jarnagin, Larissa Juschkin, Evgeniia Butaeva, Roel Gronheid, Andrew C. Kummel – University of California San Diego, KLA Corporation

12:30~13:40
Lunch

13:40~15:35
[Session 08 – Materials and Unit Process II]
Chairs: Prof. Soo-Hyun Kim(UNIST), Prof. Andrew Kummel(University of California San Diego)

13:40~14:05
(S08-01)
Invited Prof. Il-Kwon Oh, Ajou University
“Unconventional reduction in resistivity of atomic scale topological semimetal of NbP and TaP”

14:05~14:25
(S08-02)
Dr. Takayuki Harada, National Institute for Materials Science
“Low-resistivity PdCoO2 thin films with rigid interlayer bonds for advanced interconnects”

Takayuki Harada, Yuka Iwai, Midori Abe, Takuro Nagai, Yasushi Masahiro, Yasunori Kama – National Institute for Materials Science, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd.

14:25~14:45
(S08-03)
Dr. Keun Wook Shin, Samsung Advanced Institute of Technology
“Epitaxial growth and resistivity characterization of Rhodium thin films for advanced interconnect applications”

Keun Wook Shin, Gi-Young Jo, Eunji Yang, Jeong Yub Lee – Samsung Advanced Institute of Technology

14:45~15:00
(S08-04)*
Mr. Masaya Iwabuchi, Tohoku University
“Evaluation of intermetallic compounds selected From DFT database”

Masaya Iwabuchi, Junichi Koike – Tohoku University

15:00~15:20
(S08-05)
Dr. Sunyoung Noh, Samsung Electronics Co., Ltd.
“The intermixing study of Cu/Ru interface in dual-damascene scheme for advanced interconnect”
Sunyoung Noh, Yeonuk Kim, Seongho Park, Olalla Varela Pedreira, Nunzio Buccheri, Myungho Kong, Hana Kim, Marleen H. van der Veen, Eunji Jung, Jungpyo Hong, Juhyun Kim, Zsolt Tőkei, Rak-Hwan Kim, Seung Hun Lee, Sangjin Hyun, Jaihyuk Song – Samsung Electronics Co., Ltd., IMEC

15:20~15:35
(S08-06)*
Ms. Jeongha Kim, UNIST
“Improved properties of atomic layer deposited Ru films by providing additional reactant
for Cu alternative nanoscale interconnects”

Jeongha Kim, Debananda Mohapatra, Yeseul Son, Jae Min Jang, Sang Bok Kim, Taehoon Cheon, Boggeun Shong, Soo-Hyun Kim – UNIST, Hongik University, DGIST

15:35~15:55
Coffee Break

15:55~17:20
[Session 09 – Advanced Interconnects III]
Chair: Dr. Mansour Moinpour(Merck)

15:55~16:20
(S09-01)
Invited Dr. Koichi Motoyama, IBM
“Reliability and performance enhancement for fully subtractive Ru Topvia interconnects”

16:20~16:40
(S09-02)
Dr. Peng Zhao, IMEC
“Integration of through-dielectric-via on buried power rail and slit nano through-silicon-via for enhanced backside connectivity”
P. Zhao, L. Witters, M. Stucchi, D. Montero, N. Vergel, V. Georgieva, B. Chou, K. Devriendt, N. Jourdan, J.W. Maes, C. Zhu, H. Bana, R. Chukka, F. Sebaai, B. Kenens, K. Vandersmissen, N. Heylen, S. Sarkar, F. Schleicher, J. De Vos, G. Beyer, E. Beyne – IMEC, ASM International, KLA Corporation

16:40~17:00
(S09-03)
Dr. Taeyeon Oh, Lam Research
“Pathfinding for Molybdenum Hybrid Metallization”
TaeYeon Oh, Ivan Chakarov, Gonzalo Feijoo, Andras Pap, Kitae Kim, Daniel Faken, Mike Simmermacher, Sandy Wen, Benjamin Vincent, Joseph Ervin – Lam Research

17:00~17:20
(S09-04)
Dr. Chen Wu, IMEC
“Two-metal-level semi-damascene interconnect with variable width bottom metal
at metal pitch 18-26 nm and aspect ratio 4-6 routed using fully self-aligned via”

Anshul Gupta, Chen Wu, Vincent Renaud, Olalla Varela Pedreira, Alicja Lesniewska, Souvik Kundu, Giulio Marti, Gilles Delie, Fulya Ulu Okudur, Yannick Hermans, Stefan Decoster, Davide Tierno, Evi Vrancken, Bart Kenens, Naveen Reddy, Gayle Mudoch, Seongho Park, and Zsolt Tokei – IMEC

fce4d6″>17:20~18:30
fce4d6″>Poster Session
Chairs: Prof. Sehun Kwon(Pusan National University), Prof. Jeonghwan Han(Seoul National University of Science and Technology),
Dr. Tae-Ik Lee(KITECH)

18:30~20:30
Banquet

THURSDAY, JUNE 5, 2025

08:30~09:20
[Session 10 – Keynote Talk Ⅲ] VP. Kaihan Ashtiani, Lam Research
“Interconnect scaling – materials, processes and integration challenges and solutions”
Chair: Prof. Soo-Hyun Kim(UNIST)

09:20~10:30
[Session 11 – Advanced Interconnects IV]
Chair: Dr. Christopher J. Wilson(IMEC)

09:20~09:45
(S11-01)
Invited Dr. Fabrice Nemouchi, CEA Leti
“Towards 300mm superconducting devices : from FDSOI transistors to gatemon qubits”

09:45~10:10
(S11-02)
Invited Mr. Blake Hodges, IMEC
“Optimized two metal level semi-damascene interconnects for superconducting digital logic”

10:10~10:30
(S11-03)
Dr. David Mandia, Lam Research
“Selective and superconformal molybdenum growth strategies for advanced metallization”
David Mandia, Matthew Griffiths, Lee Brogan, Arya Shafiefarhood, JenniferO’Loughlin, Justin Kim, Nick De Marco, Youness Alvandi, Kyle Blakeney – Lam Research

10:30~10:50
Coffee Break

10:50~12:20
[Session 12 – BEOL Integration and Characterization]
Chairs: Mr. Tom Mountsier(Lam Research), Mr. Tatsuya Usami(Rapidus Corporation)

10:50~11:15
(S12-01)
Invited Dr. Larissa Juschkin, KLA Corporation
“High speed optical inspection of wafers”

11:15~11:40
(S12-02)
Invited Dr. Nicolas Posseme, CEA-Leti
“Benefit of post etch treatment for defectivity improvement in the BEOL”

11:40~12:00
(S12-03)
Dr. Yannick Hermans, IMEC
“Robust overlay control in 2-level semi-damascene”
Yannick Hermans, Giulio Marti, Vincent Renaud, Gilles Delie, Souvik Kundu, Stefan Decoster, Matt Galagher, Anshul Gupta, Bart Kenens, Fulya Ulu okudur, Gayle Murdoch, Andrea Mingardi, Sandip Halder, Chen Wu, Seongho Park, Zsolt Tőkei – IMEC

12:00~12:20
(S12-04)
Prof. Houman Zahedmanesh, IMEC
“Thermally-induced morphology changes in subtractive Ru lines and their mitigation”
Houman Zahedmanesh, Gilles Delie, Asif A. Shah, Hajdin Ceric, Mayank Shrivastava, Seongho Park, Zsolt Tokei – IMEC, Faculty of Engineering Science KU Leuven, Indian Institute of Science, Vienna University of Technology

12:20~13:30
Lunch

13:30~14:45
[Session 13 – 3D Packaging & Hybrid Bonding II]
Chairs: Dr. Cheng-Hsien Lu(Macronix), VP. Hoyoung Son(SK hynix)

13:30~13:50
(S13-01)
Mr. Yinan Lu, Applied Materials
“Hybrid bonding: die to wafer dynamic process investigation through advanced 3D modeling”
Yinan Lu, Benedikt Pressl, Ke Zheng, Liu Jiang, Hannes Kostner, Chris Scanlan, Raymond Hung, El Mehdi Bazizi – Applied Material, Besi

13:50~14:10
(S13-02)
Mr. SeokHo Na, Amkor Technology
“Advanced interconnection technology overview”
SeokHo Na, GaHyeon Kim, DongHyeon Park, DongSu Ryu, DongJoo Park, KyungRok Park – Amkor Technology

14:10~14:30
(S13-03)
Dr. Takeki Ninomiya, The University of Tokyo
“Aluminum nitride interlayer dielectric integration for effective heat dissipation of 3D-IC”
Takeki Ninomiya, Takeshi Takagi, Eiji Komatsu, Satoshi Yoshida, Masaaki Niwa, Tadahiro Kuroda – The University of Tokyo, Shinko Seiki Co., Ltd.

14:30~14:45
(S13-04)*
Ms. Jia-Rui Lin, National Yang Ming Chiao Tung University
“Low-temperature epoxy-based Cu/Polymer hybrid bonding for 3D IC packaging with optimized CMP”
Jia-Rui Lin, Yi-Hsuan Chen, Yuan-Chiu Huang, Jumpei Fujikata, Keiko Abe, Naoko Araki, Takayuki Ohba, Kuan-Neng Chen – National Yang Ming Chiao Tung University, Ebara Corporation, Daicel Corporation, Institute of Science Tokyo

14:45~15:00
Closing Ceremony

POSTER SESSION

Poster Session Chairs: Sehun Kwon(Pusan National University), Junghwan Han(Seoul National University of Science and Technology), Tae-Ik Lee(KITECH)

*: student presentation

P01.* TaN superconducting line integrability for quantum device on 300 mm wafer
T.Chêne, R. Segaud, T.Chevolleau, S. Minoret, F. Gustavo, F. Lefloch, P. Gergaud, M.Bouvier, J. Garrione, F.Nemouchi – Université Grenoble Alpes
P02.* Study on low-temperature plasma-enhanced atomic layer deposition process for Nb thin films
Jun Tanaka, Jun Yamaguchi, Yuhei Otaka, Noboru Sato, Naoki Tamaoki, Atsuhiro Tsukune, Yukihiro Shimogaki – The University of Tokyo
P03. Advanced patterning: tackling the big problems in printing small features
Benjamin G. Eynon, Jr. – Lam Research Corporation
P04. Delafossite oxide PtCoO₂ as new conductor for advanced interconnect metallization
Jean-Philippe Soulié, Ho-Yun Lee, Clement Merckling, Johan Swerts, Chen Wu, Seongho Park, Zsolt Tőkei, Christoph Adelmann – IMEC
P05.* Hexagonal-structured NiCo thin films for overcoming the resistivity size effect in interconnect applications
Ju Young Sung, Chae Hyun Lee, Ye Bin Lim, In Su Oh, Sang Hyeok Lee, Min Seo Kim, Yun Won Song, and Sang Woon Lee – Ajou University
P06.* Suppression of size effect in MoPd thin films for nanoscale interconnects
Hyunjin Lim, Seungchae Lee, Youngseo Na, Yehbeen Im, Donguk Kim, Kangbaek Seo, and Changhwan choi – Hanyang University
P07.* Resistivity size effect and structural analysis of single-phase BCC CoMo alloy thin films
Ye Bin Lim, Ju Young Sung, Chae Hyun Lee, In Su Oh, Sang Hyeok Lee, Min Seo Kim, Yun Won Song, and Sang Woon Lee – Ajou University
P08. Reduced compositional fluctuations in epitaxial NiAl thin films
Minghua Zhang, Jeroen E. Scheerder, Jean-Philippe Soulie, Chen Wu, Seongho Park, Zsolt Tőkei, Claudia Fleischmann, and Christoph Adelmann – IMEC
P09.* Influence of Ion energy on the surface polarity of AlScN thin films during sputter process
SeongUk Yun, Dohyun Go, Ping-Che Lee, and Andrew Kummel – University of California San Diego
P10.* Electromigration behavior of NiAl intermetallic compound as a next-generation interconnect material
Shuhei Yonehara and Junichi Koike – Tohoku University
P11. Impact of redundancy and line extension on short length effect in electromigration reliability
Simone Esposto, Ivan Ciofi, Giuliano Sisto, Kristof Croes, Dragomir Milojevic, Houman Zahedmanesh – IMEC, Belgium, Vrije Universiteit Brussels, Belgium, Université Libre de Bruxelles, KU Leuven
P12.* Effect of annealing conditions on the in-situ residual stress and interfacial adhesion energy of ALD Ru/ZnO thin films
Daeyoon Jeong, Yeseul Son, Yuki Mori, Gyunghyun Kim, Juhyun Lee, Changwoo Byun, Soo-Hyun Kim, Young-Bae Park – Andong National University, UNIST, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., Advanced Institute of Convergence Technology
P13. Design for reliability methodology for automotive IC quality enhancement
Jian-Hung Lee, Runzi Chang, Tao Wang – Marvell Technology, Inc.
P14. Thermal detection methods for rapid laser process and first reuse of the carrier wafer released by Laser Lift-Off (LLO) process
Jungrae Park, Joshua Peck, Tushar vijaykumar Meshram, Ilseok Son, Joshua Hooge, Angelique Raley, Yoshihiro Kondo, Sitaram Arkalgud – Tokyo Electron Ltd.
P15. Bevel engineering in advanced packaging
Keechan Kim, Moty Keovisai – Lam Research Corporation
P16. Etch solutions for high bow wafers bonded on glass carrier for heterogenous integration
Gautam Heman, Behnam Behziz, Alan Miller – Lam Research Corporation
P17.* Simulation-based process optimization for maximizing device area and integration efficiency in elevated-epitaxy technique for monolithic 3D ICs
Yu-Chun Chen, Ching-Lin Chen, Yu-Ming Pan, Chih-Chao Yang, Chang-Hong Shen, Kuan-Neng Chen, Chenming Hu – National Yang Ming Chiao Tung University, Taiwan Semiconductor Research Institute, University of California
P18.* Characterization of oxidation-controlled Cu for 3D-chiplet integration
Kenta Hayama, Yutetsu Kamiya, Kohei Nakayama, Fabiana Lie Tanaka, Ryo Aizawa, Yurina Fukumoto, Fumihiro Inoue – Yokohama National University, JCU Corporation
P19.* Knowledge-based multi-path neural networks for modeling through packaging glass vias
Suyash Sachdeva, K. Madhu Kiran, Rohit Dhiman – National Institute of Technology Hamirpur
P20.* Integration of sputter AlN and Aerosol Deposition AlN for 100 μm height chiplet encapsulation
Dohyun Go, Ashita Victor, Hyunseok Song, Jungho Ryu, Muhannad S. Bakir, Andrew C. Kummel – University of California San Diego, Georgia Institute of Technology, Yeungnam University
P21.* Study of a flow modulation CVD (FM-CVD) process at about 400°C for AlN growth as high thermal conductive insulating
films in 3DICs and chiplets
Yuhei Otaka, Ritsuki Sato, Naoki Tamaoki, Jun Yamaguchi, Noboru Sato, Atsuhiro Tsukune, Yukihiro Shimogaki – The University of Tokyo
P22.* Advanced CMP optimization for enhanced Cu/Polymer hybrid bonding in 3D IC
Tzu-Yu Chen, Yu-Lun Liu, Kuan-Neng Chen – National Yang Ming Chiao Tung University
P23.* Novel low temperature atomic layer annealing of vertical aligned hexagonal boron nitride
Ping Che Lee, Diego Contreras Mora, SeongUk Yun, Dipayan Pal, Amy Ross, Mark Clark, Larry Chen, Ravindra Kanjolia, Mansour Moinpour, Mingeun Choi, Satish Kumar, and Andrew Kummel – University of San Diego, EMD Group, Georgia Institute of Technology
P24.* Stable resistive switching in highly polycrystalline two-dimensional material-based memristor arrays
Jihoon Yang, Aram Yoon, Donghyun Lee, Dong-Hyeok Lim, Hongsik Jeong, Zonghoon Lee, Mario Lanza, Soon-Yong Kwon – UNIST, King Abdullah University of Science and Technology
P25.* Simultaneous selective-area synthesis of polymorphic 2D MoTe₂ transistors with ultra-scaled edge contacts
Sora Jang, Seunguk Song, Juwon Han, Aram Yoon, Zonghoon Lee, Changwook Jeong, Soon-Yong Kwon – UNIST, Sungkyunkwan University
P26.* Wafer-scale dielectric integration with a single-crystal hexagonal boron nitride interlayer for 2D transistor applications
Jaewon Wang, Hyeonwoo Lee, Jaemin Kim, Haeng Un Yeo, Cheol Hwan Yoon, Min Seok Yoo, Sora Jang, Ju-Hyoung Han, Juwon Han, Junseop Noh, Kitae Park, Joonki Suh, Tae-Sik Yoon, Seunguk Song, Minsu Seol, Chanyong Hwang, Hyung-Joon Shin, Zonghoon Lee, Changwook Jeong, Soon-Yong Kwon – UNIST, Institute for Basic Science, Samsung Advanced Institute of Technology, Sungkyunkwan University, KRISS
P27.* Temperature-dependent ALD and Quasi-ALE behavior of ruthenium thin films
Youngseo Na, Hyunjin Lim, Sangkuk Han, Hyojin Ahn, Yehbeen Im, Kangbaek Seo, Wonjae Choi, Changhwan Choi – Hanyang University
P28. High-performance ALD-Ru process using thermally stable new Ru precursor for Cu-alternative interconnects
Hideaki Nakatsubo, Jeongha Kim, Sang Bok Kim, Soo-Hyun Kim – TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., UNIST
P29.* Study of Resistivity Reduction by Annealing with a Choice of Complexing Agent in Electroless Plated Ru
Takanobu Hamamura, Yuko Ishii, Tomohiro Shimizu, Takeshi Ito, Naoki Fukumuro, Shinji Yae, Shoso Shingubara – Kansai University, University of Hyogo
P30.* Atomic layer deposition of Ru using new zero-oxidation state Ru precursor
Na-Gyeong Kang, Min-Ji Ha, Eun-Su Chung, Ji-Hoon Ahn, Jin-Sik Kim, Yoon-A Park – Hanyang university, U.P. Chemical Co. Ltd.
P31.* Low resistive Ru thin film on dielectrics without adhesive liner for sub-2nm interconnects
Ryosuke Hayashi, Mizuki Ogawa, Seibun Oshio, Kazuki Adachi, Takahisa Tanaka, Munehiro Tada – Keio University
P32. Epitaxial ruthenium for advanced interconnects
Christoph Adelmann, Jean-Philippe Soulié, Ho-Yun Lee, Clement Merckling, Anurag Vohra, Benoit Van Troeye, François Chancerel, Steven Brems, Johan Swerts, Chen Wu, Seongho Park, Zsolt Tőkei – IMEC
P33. Deposition of Ru using a metal organic Ru precursor and H₂ molecules as a non-oxidative reactant for emerging Ru interconnects
Yohei Kotsugi, Yohei Kotsug, Natsuki Yanatori, Ryosuke Harada, Hirofumi Nakagawa – TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd.
P34.* Ultra-thin reduced graphene oxide based on self assembled monolayer for Co interconnect diffusion barrier
Sibo Zhao, Xiangyu Ren, Shenghong Ju, Yunwen Wu – Shanghai Jiao Tong University
P35.* Electroless CoMn alloy exhibiting excellent diffusion barrier property against Cu diffusion
Yuko Ishii, Takanobu Hamamura, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara – Kansai University
P36. TiSiN sputtered films as Copper diffusion barriers
Francesca Corbella, Jean-Baptiste Dory, Nicolas Gauthier, Eleonora Garoni – CEA-Leti
P37. A multiscale study on interfacial properties of Ru-doped TaN in advanced interconnects
Minyeong Je, Sunghwan Kim, Geun-Myeong Kim, Ji-Hwan Lee, Seung-Yeol Baek, Hyeon-Seok Do, Youngsoo Kim, Seungyong Yoo, Eunji Jung, Yoon-Suk Kim, Seungmin Lee, Rak-Hwan Kim, Dae Sin Kim – Samsung Electronics Co., Ltd.
P38.* Plasma-enhanced atomic layer deposition of yttrium carbide thin films as a promising transition metal carbide for dual diffusion barrier in Cu and Ru metallization
Minjeong Kweon, Chaehyun Park, Debananda Mohapatra, Sang Bok Kim, Jong-Seong Bae, Taehoon Cheon, and Soo-Hyun Kim – UNIST, Institute for Basic Science, DGIST
P39. Evaluation of ALD-grown MoS₂ as Cu diffusion barrier using time-dependent dielectric breakdown
Nguyen Minh Vu, Angelica Azcatl Zacatzi, Sunil Ghimire, Thong Ngo, Charlene Chen, Mark Clark, Ravi Kanjolia, Mansour Moinpour – Merck KGaA
P40.* Chemical and elecrtrical charaterization of ALD Cobalt Nitride (CoN) as an alternative barrier for advanced Cu interconnects
Yeh Been Im, Young Seo Na, Hyun Jin Lim, Dong Uk Kim, Kang Baek Seo, Seung Chae Lee, Changhwan Choi – Hanyang University
P41.* Deposition of pinhole and particle free subnanometer TiN films in high aspect ratio spaces
Amy E. Ross, Dipayan Pal, Dohyun Go, Diego Contreras Mora, Ping Che Lee, Danish Baig, Walter Hernandez, Muhannad S Bakir, Jeffrey Spiegelman, Andrew Kummel – University of San Diego, Georgia Institute of Technology, RASIRC
P42.* Enhancing barrier performance of atomic layer deposited tantalum nitrides via post-deposition plasma treatment
Da-Ae Kim, Yujin Kim, Jiwoon Jeon, Hanwool Yeon – GIST
P43.* Plasma-enhanced atomic layer deposition of MoCx thin films using a liquid Mo precursor
Eun-Su Chung, Min-Ji Ha, Na-Gyeong Kang, Ji-Hoon Ahn, Jin-Sik Kim, MyeongHo Kim, Yungyeong Yi – Hanyang University, U.P. Chemical Co. Ltd.
P44. A revolutionary approach to Cu electroplating: achieving fast deposition rates for Cu interconnects with a non-consumable anode
Swapnil Deshmukh, Zhian He, Navaneetha Subbaiyan, Shantinath Ghongadi – Lam Research Corporation
P45.* Synethesis of single-crystal Cu Via for BEOL interconnect
Jae Wook LEE, Jae Yong SONG – POSTECH
P46. Towards robust ultra-low k spin-on dielectric materials
Hanna Luusua, Heli Kekkonen, Jyri Paulasaari, Amanda Ihalainen, Thomas Gädda, Juha Rantala – PiBond
P47.* A theoretical study for substrate-driven selectivity in area-selective atomic layer deposition for ZnO as a bottomless barrier
Taeyoung kim, Yeseul Son, Semin Kim, Soo-Hyun kim, Byungjo Kim – UNIST
P48.* Control of surface oxidation and stress by electrodeposited bilayered Ni film
Takeyasu Saito, Kohei Yamada, Ryosuke Komoda, Kaishu Maeda, Naoki Okamoto – Osaka Metropolitan University
P49.* Exploration of residual strain in HfO₂ thin films using the 2D-GIXD synchrotron technique
Seonghun Lee, Tae Joo Shin – UNIST
P50.* Resistivity engineering of atomic layer deposited tungsten carbonitride for three-dimensional cross point memory electrodes applications
Seunggyu Na, Minkyu Lee, Namkyu Yoo, Myoungsub Kim, Seung-min Chung, and Hyungjun Kim – Yonsei University, SK Hynix, Korea, Hoseo University
P51.* Atomic-scale investigation of plasma-assisted crystallization and dopant redistribution in Al doped TiO₂ via molecular dynamics simulations
Youngmin Sunwoo, Gyuha Lee, Jihwan An, Byungjo Kim – UNIST, POSTECH
P52.* Enhancing TCO performance: low-temperature PEALD-deposited In2O3 thin films
Tae-Kyung Kim, Ji-Hyun Gwoen, Hae-Dam Kim, Jin-Seong Park – Hanyang University
P53.* Interface engineering for IGZO/Metal contacts: reducing contact resistivity with SiO₂ inter-layers using cross-bridge kelvin resistor analysis
Taewon Hwang, So Young Lim, Sangwoo Lee, Jin-Seong Park – Hanyang University, Tokyo Electron Ltd.
P54.* Theoretical investigation of SiO₂ atomic layer deposition using tris(dimethylamino)silane precursor and H₂O and H₂O₂ reactant
Seungwon Shim, Soo-Hyun Kim, Han-Bo-Ram Lee, Youngho Kang – Incheon National University, UNIST
Seungwon Shim, Soo-Hyun Kim, Han-Bo-Ram Lee, Youngho Kang – Incheon National University, UNIST