Committee

NORTH AMERICA

Zhihong Chen, Purdue University
Paul Besser, Entegris
Kathleen Dunn, SUNY Polytechnic
Mark Kellam, Rambus
Hirokazu Aizawa, TEL
He Ren, Applied Materials
Todd Ryan, Intel
Glen Wilk, ASM
Seung-June Choi, Intel
Satish Radhakrishnan, Samsung
Arup Saha, ASML
John Zhu, Qualcomm

ASIA

Soo-Hyun Kim, Ulsan National Institute of Science and Technology (UNIST)
Tatsuya Usami, Rapidus Corporation
Hann-Huei Tsai, Taiwan Semiconductor Research Institute
Yasuhiro Kawase, Mitsubishi Chemical Corp.
Hiroyuki Nagai, Tokyo Electron Ltd.
Susumu Matsumoto, Tower Partners Semiconductor Co.
Kang Sub Yim, Samsung Electronics Co.
Kuan-Neng Chen, National Yang Ming Chiao Tung University
Yoshihisa Kagawa, Sony Corp
Chih-Chien Liu, UMC
Ming-Han Lee, TSMC
Choon-Hwan Kim, SK Hynix Semiconductor
Yeow Kheng Lim, National University of Singapore
Masayoshi Tagami, Kioxia Corp.
Fumihiro Inoue, Yokohama National University
Munehiro Tada, Keio University
Jeong Hoon Ahn  Samsung Electronics Co.
Tan Tam Lyn, Hyperlight
Hisashi Kino, Kyushu University
Ho-Young Son, SK Hynix Semiconductor
Cheng-Hsien Lu, Macronix

EUROPE

Philippe Rodriguez, CEA-Leti
Benjamin Lilienthal-Uhlig, Fraunhofer IPMS/CNT
Christopher J. Wilson, Imec
Tobias Herzig, Infineon
Marco Arnold, BASF Electronic Materials
Stefan Schulz, TU Chemnitz
Pieter Wöltgens, ASML
Tobias Wernicke, EVG
Seongho Park, Imec